▎ 摘　　要

NOVELTY - Preparing metal chelated Schiff base modified graphene/polyetheretherketone wear-resistant conductive composite material, comprises e.g. (i) reacting asparaginic acid, sodium hydroxide, substituted salicylaldehyde to obtain yellow solid, cooling and washing to obtain Schiff base ligand (I), (ii) dissolving (I) in tetrahydrofuran solvent, then adding cobalt(II) chloride and manganese(II) chloride, reacting and filtering, and washing to obtain metal chelated Schiff base (II) or (III), (iii) preparing graphene oxide by improved Hummers method, then ultrasonically dispersing in dimethyl sulfoxide, adding metal chelated Schiff base, reacting, filtering, washing with ethanol to obtain metal chelate Schiff base modified graphene, (iv) dissolving polyether ether ketone in dimethylformamide, then adding polyethylene glycol, casting and drying, and (v) adding metal chelated Schiff base-modified graphene into ethanol to obtain dispersion, soaking the obtained film into dispersion and drying. USE - The composite material is useful in semiconductor material (claimed). ADVANTAGE - The composite material has excellent wear resistance and conductivity. DETAILED DESCRIPTION - Preparing metal chelated Schiff base modified graphene/polyetheretherketone wear-resistant conductive composite material, comprises (i) dissolving asparaginic acid and sodium hydroxide in ethanol, then adding substituted salicylaldehyde, heating and refluxing, then reacting for 3-5 hours to obtain yellow solid, continuously reflowing and reacting for 2 hours, cooling to room temperature, filtering, repeatedly washing the solid with ethanol to obtain Schiff base ligand of formula (I), (ii) dissolving Schiff base ligand in tetrahydrofuran solvent, then adding cobalt(II) chloride and manganese(II) chloride, refluxing and reacting for 24 hours, cooling and filtering, and repeatedly washing the solid with ethanol to obtain metal chelated Schiff base of formulae (II) or (III), (iii) preparing graphene oxide by improved Hummers method, then ultrasonically dispersing graphene oxide in dimethyl sulfoxide, stirring, dripping dimethyl sulfoxide solution into a mixed solution of dicyclohexylcarbodiimide and dimethylaminopyridine, continuously stirring by adding metal chelated Schiff base, reacting at 60-70 degrees C for 7-10 hours, stopping the reaction, filtering, repeatedly washing the solid with ethanol to obtain metal chelate Schiff base modified graphene, (iv) dissolving polyether ether ketone in dimethylformamide, then adding polyethylene glycol 4000, stirring to form membrane liquid, casting film on a clean glass plate, then drying at 50 degrees C for 3 hours, cooling to room temperature, and immersing in water, and (v) adding metal chelated Schiff base-modified graphene into ethanol to obtain dispersion, soaking the polyetheretherketone film into the dispersion for 3-5 hours, taking out and drying to obtain final product. R = H, halogen, 1-20C alkyl, 2-20C alkenyl, 2-20C alkynyl, 1-20C heteroalkyl, 2-20C heteroalkenyll, 2-20C heteroalkynyl, 3-20C cycloalkyl, 2-20C heterocycloalkyl , 2-20C alkylcarboxy group, 2-20C alkyl formamide, 2-20C alkyl imino group, 1-20C alkyl sulfonate or 1-20C alkyl nitrile group. An INDEPENDENT CLAIM is also included for metal chelated Schiff base modified graphene/polyetheretherketone wear-resistant conductive composite material is obtained by above mentioned method.