• 专利标题:   Anti-tensile ultra-thin lithium foil has discontinuous metal lithium material dispersed in pores of porous anti-tensile layer to form discrete metal lithium material, and surface protective layer located on porous anti-tensile layer.
  • 专利号:   CN113206217-A, CN215118948-U
  • 发明人:   KONG D, HUAN Q, SUN Z, LIU C, CHEN Q, MU H
  • 专利权人:   TIANJIN ZHONGNENG LITHIUM IND CO LTD
  • 国际专利分类:   H01M004/134, H01M004/1395, H01M004/80, H01M010/052
  • 专利详细信息:   CN113206217-A 03 Aug 2021 H01M-004/134 202183 Pages: 11 Chinese
  • 申请详细信息:   CN113206217-A CN10445386 23 Apr 2021
  • 优先权号:   CN10445386, CN20852964

▎ 摘  要

NOVELTY - An anti-tensile ultra-thin lithium foil has a conductive porous anti-tensile layer formed using inorganic fiber material. The conductive porous anti-tensile layer has pore size of 1 nm to 200 microns and porosity of 10-85%. A discontinuous metal lithium material is located in pores of the conductive porous anti-tensile layer. The discontinuous metal lithium material is dispersed in the pores of the conductive porous anti-tensile layer. A surface protective layer is located on the conductive porous anti-tensile layer. USE - Anti-tensile ultra-thin lithium foil. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the lithium foil, which involves: (A) mixing inorganic fiber material, bonding agent, pore-forming agent and optionally inorganic filler to prepare slurry; (B) coating the slurry; (C) carrying out high-temperature carbonization treatment at 300-3000 degrees C to form conductive porous anti-tensile layer; (D) modifying inorganic fiber material by vapor deposition, magnetron sputtering, electroplating, atomic doping and/or atomic etching; (E) attaching metal lithium material to pores of the porous anti-tensile layer to form discontinuous metal lithium material; (F) dispersing discontinuous metal lithium material in pores of porous anti-tensile layer in the form of discrete metal lithium material; and (G) optionally applying surface protective layer on the porous anti-tensile layer.