▎ 摘　　要

NOVELTY - Preparation of gallium nitride-based virus self-detecting suicide device involves growing gallium nitride film on single crystal substrate, growing aluminum nitride buffer layer on gallium nitride film, growing aluminum-gallium nitride on aluminum nitride buffer layer, forming a barrier layer, etching the drain electrode on device to remove the photoresist, depositing p-gallium nitride on the surface of the device, forming a barrier layer, etching away the excess p-gallium nitride except the drain electrode, and activating the p-gallium nitride, performing photolithography process on the surface of p-gallium nitride to expose the drain, and using the other side of the drain electrode as the source electrode, vapor-depositing a metal film on the drain and source, annealing, forming an electrode ohmic contact, vapor-depositing a metal film between the drain and source electrodes, and fixing virus probes with complementary DNA sequences on the metal film to form a gate electrode. USE - Preparation of gallium nitride-based virus self-detecting suicide device. ADVANTAGE - The method integrates LED-High electron mobility transistor double structure of the gallium nitride device, thereby achieving dual functions of virus detection and killing, and can effectively reduce the size of the chip, and simplify the process flow. DETAILED DESCRIPTION - Preparation of gallium nitride-based virus self-detecting suicide device involves growing gallium nitride film on single crystal substrate, growing aluminum nitride buffer layer on gallium nitride film, and growing aluminum-gallium nitride on aluminum nitride buffer layer, forming a barrier layer, etching the drain electrode on the surface of the device under chlorine/boron trichloride atmosphere to remove the photoresist, depositing p-gallium nitride on the surface of the device so that the thickness of deposited p-gallium nitride is the same as the depth of the groove etched in the drain electrode, forming a barrier layer, etching away the excess p-gallium nitride except the drain electrode, and activating the p-gallium nitride, performing photolithography process on the surface of p-gallium nitride to expose the drain, and using the other side of the drain electrode as the source electrode, vapor-depositing a metal film on the drain and source, annealing, forming an electrode ohmic contact, vapor-depositing a metal film between the drain and source electrodes, and fixing virus probes with complementary DNA sequences on the metal film to form a gate electrode.