▎ 摘　　要

NOVELTY - Improving field emission performance of graphene sheet-silicon nanowire array composite material involves preparing a silicon nanowire array by using a metal catalytic corrosion method, and then bombarding the silicon nanometer by using a carrier silver ion at an inclination angle. The line array is prepared by using a microwave plasma enhanced chemical vapor deposition method on a silicon nanowire array. The obtained graphene sheet-silicon nanowire array is processed by using microwave nitrogen and hydrogen plasma at room temperature. The microwave power is adjusted to 120-160 watt, the chamber pressure is 1.5 kilo Pascal, and the treatment time is 20-60 minutes to control the morphology of the graphene sheet, and then the obtained nitrogen-doped graphene sheet-silicon nanowire array is annealed for 2 hours to obtain high-temperature heat-treated nitrogen-doped graphene sheet-silicon nanowire array composite material. USE - Method for improving field emission performance of graphene sheet-silicon nano wire array composite material. ADVANTAGE - The method enables to improve field emission performance of graphene sheet-silicon nanowire array composite material which has low operating electric field, high field emission current density and good stability, and has high application value. DETAILED DESCRIPTION - The nitrogen-doped graphene sheet-silicon nanowire array composite material is deposited by a silver layer on a silicon nanowire bombarded by silver ions. The number is 2-5 layers, rich in defects, densely distributed, nitrogen-doped graphene sheets. The graphene sheets are mostly 50-100 nanometer in diameter. The prepared nitrogen-doped graphite open field of the chip-silicon nanowire array composite is only 2.53-2.77 volt per micro meter, and the maximum field emission current density is 9.32-1.63 milliampere per square centimetre. The average field emission current density is 9.19 milliampere per square centimeter and 20 hours. The current decay inside is only 0.76 wt.%.