▎ 摘　　要

NOVELTY - Directly growing multilayer graphene involves forming a small-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the small-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The carbon of the amorphous carbon layer passes through the metal catalyst layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment using the small-layer graphene as a seed layer and moves onto the small-layer graphene. The small-layer graphene directly grows into multilayer graphene. USE - Method for directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography (claimed). ADVANTAGE - The method enables to prepare multilayer graphene which when used in pellicle provide an extreme ultraviolet transmittance of 90% or more and a maximum reflectance of 0.0005%. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a pellicle for extreme ultraviolet exposure using a direct growth method of multilayer graphene, which involves directly growing multilayer graphene on a silicon nitride substrate to form a core layer; forming a capping layer on the core layer; removing the central portion of the silicon nitride substrate under the core layer to form an open portion where the core layer is exposed; forming the core layer; forming a small-layer graphene on the silicon nitride substrate; forming a metal catalyst layer on the small-layer graphene; forming an amorphous carbon layer on the metal catalyst layer; directly growing raffin into multilayer graphene; and removing the metal catalyst layer on the multilayer graphene.