▎ 摘　　要

NOVELTY - The method (300) involves forming (302) a trench within a dielectric layer. The trench comprises an interconnect portion and through portion, which exposes an underlying conductive feature. A seed layer is deposited (304) within the trench. A carbon layer is deposited (306) on the seed layer. A carbon dissolution process is performed (308) to cause a graphene layer to form between the seed layer and the underlying conductive feature. A remainder of the trench is filled (312) with a conductive material. The seed layer comprises nickel, cobalt, iron or copper. The carbon dissolution process comprises an annealing process applied at a temperature range of about 200-1200 degrees. The carbon layer is removed using one of wet-etching or dry-etching. USE - Method for forming graphene layer between through and conductive feature. ADVANTAGE - The reduced contact resistance between the through and the conductive feature improves the performance of the device. The presence of the graphene layer reduces the contact resistance between the through and the conductive feature. The quality of the atomic layer deposition (ALD) process is improved. The selective etching process removes the carbon layer without affecting the seed layer underneath. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating a method for forming graphene layer. Method for forming graphene layer (300) Step for forming a trench (302) Step for depositing a seed layer (304) Step for depositing a carbon layer (306) Step for performing a carbon dissolution process (308) Step for filling a remainder of the trench (312)