• 专利标题:   Preparation of graphene nano-narrow band by electrifying aluminum sheet as cathode and copper foil as anode into electrolytic polishing solution, drying copper foil, photoetching and patterning with graphene and hydrogen plasma etching.
  • 专利号:   CN112661140-A
  • 发明人:   CHEN C, HE Z, JIANG S, SHI F, WANG G, ZHOU Q
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   C01B032/184, C09G001/06, C22F001/02, C22F001/08, C25F003/22
  • 专利详细信息:   CN112661140-A 16 Apr 2021 C01B-032/184 202141 Pages: 11 Chinese
  • 申请详细信息:   CN112661140-A CN11446581 11 Dec 2020
  • 优先权号:   CN11446581

▎ 摘  要

NOVELTY - A graphene nano-narrow band is prepared by purifying aluminum sheet, taking processed aluminum sheet as cathode, preparing copper foil, taking copper foil as anode, preparing electrolytic polishing solution, respectively inserting cathode and anode into electrolytic polishing solution at same time, setting current intensity at 1.2-1.3 A, electrifying for 1-2 minutes, electrolytic polishing copper foil, putting polished copper foil in nitrogen drying machine for drying, putting dried copper foil in quartz tube for heating, annealing to obtain porous copper foil, preparing graphene, transferring graphene to copper foil, photoetching and patterning graphene to obtain patterned graphene, putting graphical graphene in reactor, controlling pressure in reactor to 2.0-10.0 Torr, growing for 20-30 minutes, carrying out low temperature growth of graphene, cooling to room temperature under vacuum condition to obtain graphene nano-narrow band, and performing hydrogen plasma etching treatment. USE - The method is used for preparing graphene nano-narrow band. ADVANTAGE - The method does not damage lattice structure of graphene strip and keeps intrinsic properties of graphene strip.