▎ 摘　　要

NOVELTY - Preparation method of epitaxial structure of gallium nitride-based power device comprises providing a substrate, and patterning the surface of the substrate, growing a graphene thin film on the patterned substrate; growing a boron nitride film on a graphene film; growing an aluminum nitride membrane; and growing a gold nitride buffer layer on the aluminum nitrate membrane; cultivating an aluminum gallium oxide barrier layer on a gallium nitrogen buffer layer; and cultivating a gallium nitride cap layer on an AlGaN potential barrier layer; where the method further comprises providing the substrate with a substrate and a patterning substrate, the graphene thin membrane is grown on the substrate on the surface, and the graphene film is grown in the substrate. USE - Preparation method of epitaxial structure of gallium nitride-based power device e.g. high electron mobility transistor (HEMT) device. Uses include but are not limited to aviation, high temperature radiation, radar, communication and automobile electronic. ADVANTAGE - The method: can effectively improve the gallium nitride-based power device heat transmission and defect problem by introducing the two-dimensional material on the substrate, improving the stability and reliability of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an epitaxial structure of gallium nitride-based power device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the preparation method of epitaxial structure of gallium nitride-based on power device (Drawing includes non-English language text).