▎ 摘　　要

NOVELTY - Preparation of chemical vapor deposition (CVD) graphene planar micro super capacitor involves (i) pressing and cleaning a catalytic metal substrate, (ii) preparing graphene on the pretreated catalytic metal substrate by using a chemical vapor deposition (CVD) technology and transferring the graphene to a target substrate to obtain a sample with a graphene-target substrate structure, (iii) designing a photoetching mask plate with an interdigital structure, (iv) depositing a layer of metal (gold) current collector on a sample of the graphene-target substrate by using E-Beam equipment to obtain a sample with a current collector-graphene-target substrate structure, and (v) photoetching a sample of the current collector-graphene-target substrate to obtain a graphene microelectrode. USE - Preparation of chemical vapor deposition (CVD) graphene planar micro super capacitor used for manufacturing large integrated circuit. ADVANTAGE - The method produces chemical vapor deposition (CVD) graphene planar micro super capacitor having small volume, high integration and flexibility, shortened transportation distance for transferring charges, improved utilization area of electrode materials, reduced obstruction of transferred charges in transportation and increased frequency response. DETAILED DESCRIPTION - Preparation of chemical vapor deposition (CVD) graphene planar micro super capacitor involves (i) pressing and cleaning a catalytic metal substrate, (ii) preparing graphene on the pretreated catalytic metal substrate by using a chemical vapor deposition (CVD) technology and transferring the graphene to a target substrate to obtain a sample with a graphene-target substrate structure, (iii) designing a photoetching mask plate with an interdigital structure, (iv) depositing a layer of metal (gold) current collector on a sample of the graphene-target substrate by using E-Beam equipment to obtain a sample with a current collector-graphene-target substrate structure, and (v) photoetching a sample of the current collector-graphene-target substrate to obtain a graphene microelectrode. The photoetching involves (i) placing a sample of the current collector-graphene-target substrate on a spin coater, dripping photoresist, rotating for 60 seconds at the rotating speed of 4000 rps, placing the sample on a heating plate and drying for 90 seconds at 100-125 degrees C to obtain a sample with the structure of the photoresist-current collector-graphene target substrate, and exposing the sample for 3-5 seconds by using a photoetching machine, (ii) feeding a sample of the exposed photoresist-current collector-graphene target substrate into a developing solution for development for 30-60 seconds, feeding the sample into deionized water for rinsing, and blow-drying with nitrogen to obtain an interdigital photoresist-current collector-graphene-target substrate sample, (iii) soaking a sample of the interdigital photoresist-current collector graphene-target substrate in a mixed solution of potassium iodide and iodine to corrode and remove a gold layer which is not protected by the photoresist, in which the corrosion time is 20-50 seconds, feeding the sample into deionized water for rinsing for several times, and blow-drying with nitrogen, (iv) using an oxygen plasma etching machine for etching graphene in an interdigital gap to prevent a positive electrode plate and a negative electrode plate from being short-circuited for 2-15 minutes to obtain graphene microelectrode sample with photoresist, in which the etching power is 200-500 W, the oxygen flow rate is 100-300 sccm, (v) soaking the graphene microelectrode sample with the photoresist in acetone solution to remove the photoresist, finally rinsing in absolute ethyl alcohol for 30 minutes, rinsing in deionized water for 30 minutes, and blow-drying with nitrogen to obtain the graphene microelectrode sample. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of illustrating preparation of graphene planar micro super capacitor.