• 专利标题:   Deep-UV LED hetero-epitaxial substrate comprises composite substrate composed of nanosheets having preset diameter and higher melting point than growth temperature of epitaxial material, physically coated on sapphire substrate.
  • 专利号:   CN113206174-A, CN113206174-B
  • 发明人:   ZHANG Y, SHAN M, ZHENG Z, ZHAO Y, WU F, DAI J, CHEN C
  • 专利权人:   UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   H01L033/02, H01L033/20, H01L033/44
  • 专利详细信息:   CN113206174-A 03 Aug 2021 H01L-033/02 202168 Pages: 7 Chinese
  • 申请详细信息:   CN113206174-A CN10397975 14 Apr 2021
  • 优先权号:   CN10397975

▎ 摘  要

NOVELTY - A deep-UV LED hetero-epitaxial substrate comprises a composite substrate composed of nanosheets having a surface diameter of 5-1000 nm, uniformly and physically coated on the surface of a sapphire substrate. The melting point of the nanosheets is higher than the growth temperature of the epitaxial material. USE - Deep-UV LED hetero-epitaxial substrate. ADVANTAGE - The epitaxial substrate has improved crystal quality and improved dislocation density at the surface. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation of the deep UV LED hetero-epitaxial substrate.