• 专利标题:   Semiconductor container made of composite material comprising cycloolefin material comprising graphene material doped cycloolefin copolymer and graphene material doped cycloolefin polymer.
  • 专利号:   US2020243407-A1, CN111500006-A, CN111500005-A, JP2020123720-A, KR2020095409-A
  • 发明人:   JIANG J, CHIU M, QIU M
  • 专利权人:   GUDENG PRECISION IND CO LTD, GUDENG PRECISION IND CO LTD, GUDENG PRECISION IND CO LTD, GUDENG PRECISION IND CO LTD
  • 国际专利分类:   C08K003/04, C08L053/00, G03F001/66, H01L023/06, C08L045/00, H01L021/673, B65D085/30, B65D085/38
  • 专利详细信息:   US2020243407-A1 30 Jul 2020 H01L-023/06 202065 Pages: 6 English
  • 申请详细信息:   US2020243407-A1 US777853 30 Jan 2020
  • 优先权号:   TW103648

▎ 摘  要

NOVELTY - Semiconductor container made of composite material comprising a cycloolefin material comprising 0.6-8 wt.% graphene material doped cycloolefin copolymer and a graphene material doped cycloolefin polymer, is claimed. The graphene material comprises graphene nanoplatelets and/or graphene oxide. USE - Used as a semiconductor container. ADVANTAGE - The semiconductor container made of composite material has: a specific weight of 1-1.2; water absorbency percentage of 0.0001-0.01%; a shrinkage of 0.1-0.5%; impact strength of 30-50 J/m; a surface resistivity of 109-1012 Omega /sq, preferably 105-109 Omega /sq when the graphene material is 0.6-1.8 wt.%, preferably 1.8-3.6 wt.%; surface resistivity which is less than 104 Omega /sq, when the graphene material is 3.6-8 wt.% (claimed); and light weight, high dimensional stability, long humidity retention time, low harmful gases release and high yield. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a composite material comprising 0.6-8% the graphene material doped cycloolefin copolymer and a graphene material doped cycloolefin polymer.