• 专利标题:   Epitaxial patterning substrate, has silicon carbide layer is covered with patterned graphene film that is fixed on silicon carbide layer surface, where carbide layer surface is fixed with window and Width of window is in specific range.
  • 专利号:   CN106856164-A
  • 发明人:   XU Y, WANG J, XU K
  • 专利权人:   SUZHOU NANOWIN SCI TECHNOLOGY CO LTD
  • 国际专利分类:   H01L021/20
  • 专利详细信息:   CN106856164-A 16 Jun 2017 H01L-021/20 201755 Pages: 5 Chinese
  • 申请详细信息:   CN106856164-A CN11243584 29 Dec 2016
  • 优先权号:   CN11243584

▎ 摘  要

NOVELTY - The substrate has a silicon carbide layer is covered with a patterned graphene film that is fixed on a silicon carbide layer surface. The silicon carbide layer surface is fixed with a window. Width of the window is about 10-3000 nm. Atomic range of the silicon carbide layer surface is about 0.1-3 microns. USE - Epitaxial patterning substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an epitaxial patterning substrate manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating an epitaxial patterning substrate manufacturing method. '(Drawing includes non-English language text)'