• 专利标题:   Integrated circuit structure contained in electronic device, has graphene barrier material which conforms to sides and bottom of opening, and conductive metal which fills portion of remainder of opening in dielectric material.
  • 专利号:   DE102020131676-A1, US2021305161-A1, US11251129-B2, US2022093514-A1
  • 发明人:   CHANDRASEKHAR N, CHOWDHURY A S
  • 专利权人:   INTEL CORP, INTEL CORP
  • 国际专利分类:   H01L021/768, H01L023/532, H01L021/02, H01L023/522, H01L023/528
  • 专利详细信息:   DE102020131676-A1 30 Sep 2021 H01L-023/532 202185 Pages: 22 German
  • 申请详细信息:   DE102020131676-A1 DE10131676 30 Nov 2020
  • 优先权号:   US833258, US542136

▎ 摘  要

NOVELTY - The integrated circuit (200) structure has a dielectric material (212) having an opening which is defined by sides and a bottom. A graphene barrier material (214) is set to conform to the sides and bottom of the opening. A conductive metal (215) over the graphene barrier material fills at least a portion of a remainder of the opening in the dielectric material. USE - Integrated circuit structure contained in electronic device such as desktop, laptop, server, cell phones, electronics for personal use. ADVANTAGE - The improved electrical properties and lower electromigration failures in SoCs of future technology nodes are realized. The use of graphene as a barrier material provides improved electrical properties and, among other advantages, fewer electromigration failures. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method of manufacturing an integrated circuit; and (2) a method of activating a dielectric surface for graphene deposition. DESCRIPTION OF DRAWING(S) - The drawings show schematic view of the portion of an integrated circuit showing a cross-sectional view of circuitry. (Drawing includes non-English language text) Integrated circuit (200) Dielectric material (212) Graphene barrier material (214) Conductive metal (215) Interconnection (216)