▎ 摘　　要

NOVELTY - The method involves using graphite powder by Hummers process to obtain an oxidized graphene suspension, spin coating the oxidization graphene on a polyethylene terephthalate (PET) film, preparing an oxidization-graphene film. A dual-beam light-emitting system of an annular reduction beam and a spherical oxidation beam are used to photo-etch the oxidation graphene film, where the process further comprises using a double-beam optical lithography system of a ring-reducing beam and the spherical oxidization beam. USE - Double-beam lithography method of graphene-over-diffraction limit of diffraction limit used in ultra-fine photo-etching technology field of graphene. ADVANTAGE - The method enables using annular reducing beam and spherical oxidation beam to photo-resist the oxidized graphene film at the same time, it can manufacture refined parallel linear pattern beyond the diffraction limit, realizing LSG pattern with minimum line width of 90 nm. The LSG parallel pattern with different average line width and average distance can be manufactured by controlling the laser power and the sweeping speed of the double-beam. The pattern can be used for manufacturing the electrode of the super capacitor, and the specific capacity can reach to 308F/g. DESCRIPTION OF DRAWING(S) - The drawing shows a SEM image of the LSG pattern obtained by lithography under different laser power, the scale is 500nm.