▎ 摘　　要

NOVELTY - Semiconductor device (1) comprises a first conductive layer (110) including a first metal; a second conductive layer (130) that is electrically connected to the first conductive layer and that includes a second metal; and an interconnection structure (120) disposed in a connection portion between the first conductive layer and the second conductive layer, where the interconnection structure comprises a seed layer (120a) disposed on the first conductive layer, the seed layer including graphene; and a metal migration barrier layer disposed on the seed layer, the metal migration barrier layer including MXene (two-dimensional transition metal carbides, nitrides, and carbonitride). USE - Semiconductor device. ADVANTAGE - The semiconductor device continues to decrease, technologies capable of improving the structural stability and electrical reliability in connection portions between metal wirings are in high demand. The interconnection structures may reduce contact resistance at a connection portion of the metal wirings. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device, which involves providing a substrate; forming a first conductive layer including a first metal on the substrate; forming a seed layer including graphene on at least a portion of the first conductive layer; forming a metal migration barrier layer including MXene on the seed layer; and forming a second conductive layer including a second metal on the metal migration barrier layer to electrically connect the second conductive layer to the first conductive layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of semiconductor device. 1Semiconductor device 110First conductive layer 120Interconnection structure 120aSeed layer 130Second conductive layer