▎ 摘　　要

NOVELTY - The structure has a MOSFET chip (11), a first interconnection layer (12), a bottom copper-clad ceramic substrate (13), a second interconnection layer (14), a top copper-clad ceramic substrate (15), a lead frame (16), a pouring sealant (17) and a tube housing (18). The bottom copper-clad ceramic substrate comprises a bottom heat dissipation layer (131), a first ceramic layer (132) and a bottom wiring layer (133). The top copper-clad ceramic substrate comprises a top heat dissipation layer (151), a second ceramic layer (152) and a top wiring layer (153) from top to bottom in sequence. The lower surface of MOSFET chip is provided with a chip drain electrode connecting region. The chip drain connection region is connected to a corresponding signal terminal on the lead frame through a bottom wiring layer. The chip source connection region and the chip gate connection region are connected to a corresponding signal terminal on the lead frame through a top wiring layer. USE - High reliability packaging structure for super-junction power MOSFET device used in industrial control field, new energy automobile, direct current charging pile and super fast charging field. ADVANTAGE - The structure adopts double-sided copper-clad ceramic substrate structure, so that packaging thermal resistance can be reduced, while reducing power loop inductance, improving stress resistance of the package to heat expansion, and improving heat dissipation performance by high heat conducting graphene material so as to improve reliability of the power MOSFET device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for packaging power MOSFET. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of package structure. MOSFET chip (11) First interconnection layer (12) Bottom copper-clad ceramic substrate (13) econd interconnection layer (14) Top copper-clad ceramic substrate (15) Lead frame (16) Pouring sealant (17) Tube housing (18) Bottom heat dissipation layer (131) First ceramic layer (132) Bottom wiring layer (133) Top heat dissipation layer (151) Second ceramic layer (152) Top wiring layer (153)