• 专利标题:   Preparation method of graphene-black silicon heterojunction, involves utilizing graphite plate as anode for electrophoresis and black silicon substrate as cathode in order to reduce resistance value during electrophoresis.
  • 专利号:   CN110634993-A
  • 发明人:   HU H, LIU S, JI Z, SHANG J, YU T, XU J, LIU Y
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0745, H01L031/109, H01L031/18
  • 专利详细信息:   CN110634993-A 31 Dec 2019 H01L-031/18 202009 Pages: 6 Chinese
  • 申请详细信息:   CN110634993-A CN10839449 05 Sep 2019
  • 优先权号:   CN10839449

▎ 摘  要

NOVELTY - The method involves cleaning the black silicon substrate, and removing an oxide layer, oil stains and other impurities on the surface of the substrate. The graphene nanosheets, magnesium nitrate, and isopropanol are utilized to prepare the electrophoresis solution at a certain ratio, and to keep the liquid in an ultrasonic and heated environment during the preparation process, and to store in the environment. The graphite plate is utilized as the anode for electrophoresis and a black silicon substrate is utilized as the cathode in order to reduce the resistance value during electrophoresis. The electrophoresed substrate is maintained into 120 degrees c drying oven for drying. USE - Preparation method of three-dimensional stacked graphene-black silicon heterojunction (claimed). ADVANTAGE - The manufacturing cost of graphene-black silicon heterojunction is reduced, since process of graphene-black silicon heterojunction is simplified. The graphene-black silicon heterojunction is operated easily. The prepared three-dimensional stacked graphene osmium black silicon heterostructure has a wide absorption spectrum, high absorption rate and uniform characteristic. DESCRIPTION OF DRAWING(S) - The drawing shows a pictorial view of three-dimensional stacked graphene-black silicon heterojunction.