• 专利标题:   Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.
  • 专利号:   US2014238591-A1, KR2014107968-A, US9023166-B2
  • 发明人:   CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J
  • 专利权人:   CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B031/04, B41F016/00, B41M005/10, B82B003/00, C01B031/02, B32B038/10, B32B043/00, B44C001/17, B44C001/175
  • 专利详细信息:   US2014238591-A1 28 Aug 2014 C01B-031/04 201459 Pages: 11 English
  • 申请详细信息:   US2014238591-A1 US923490 21 Jun 2013
  • 优先权号:   KR022261

▎ 摘  要

NOVELTY - Transferring graphene involves: forming a graphene layer by composing graphene and a base layer; depositing a self-assembled monolayer on the graphene layer; and separating a combination layer comprising the self-assembled monolayer and the graphene layer from the base layer. USE - For transferring graphene (claimed), which is useful for manufacturing graphene dual junction diode e.g. graphene p-i-n junction diode. ADVANTAGE - The present method transfers graphene having an advantage of a simplified manufacturing process with no residues remained after fabrication. The graphene dual junction diode having the p-i-n structure manufactured using the present method of transferring graphene can have much better electrical characteristics than diodes manufactured using an existing method because impurities are fundamentally prevented from being generated in an interface or surface.