▎ 摘　　要

NOVELTY - The method comprises depositing a metal layer (CM) on a surface of a substrate (S), and continuously realizing a buried carbon rich area (CC) inside the metal layer by creating and maintaining the carbon rich area so as to form a film of graphene (CG) by a diffusion of the metal layer, where the film of graphene interfaces the metal layer with the substrate. The realization step is carried out by an impaction of a flow (Fc) of atoms from carbon and/or carbon ions of sufficient energy to penetrate part of the metal layer. The metal layer has a thickness of about a few hundreds of nanometers. USE - The method is useful for manufacturing a film of graphene (claimed) that is useful in a field of electronics and visualization. ADVANTAGE - The method is capable of controlling film growth of graphene in a simple and rapid manner at a lower temperature. DETAILED DESCRIPTION - The method comprises depositing a metal layer (CM) on a surface of a substrate (S), and continuously realizing a buried carbon rich area (CC) inside the metal layer by creating and maintaining the carbon rich area so as to form a film of graphene (CG) by a diffusion of the metal layer, where the film of graphene interfaces the metal layer with the substrate. The realization step is carried out by an impaction of a flow (Fc) of atoms from carbon and/or carbon ions of sufficient energy to penetrate part of the metal layer. The metal layer has a thickness of about a few hundreds of nanometers. The energy of the flow of atoms of carbon and/or carbon ions is of about a few tens to a few hundreds of electrons volts. The flow of atoms of carbon and/or carbon ions is modulated with doping a course of time. The method further comprises: realizing a multi-layer structure including an interface layer allowing a good crystallographic compatibility with graphene and ruthenium and an upper base consisting of nickel, copper, cobalt, iron or catalytic alloys with respect to hydrocarbons; cleaning the substrate by chemical way and/or ionic bombardment to avoid any potential contamination of the interface between the metal layer and a surface of the substrate; and dissolving chemical on the metal layer to expose a formed graphene layer. The realization step is carried out by: a plasma-enhanced chemical vapor deposition (PECVD) method comprising creating a plasma including carbonaceous ionized species, and impacting the carbonaceous ionized species on the metal layer under an action of an electric field; and a molecular beam epitaxy method with a gas beam charged of methane in molecular form and carbons ions. The PECVD method is carried out with a three-electrode standard reactor generating an ionized species flow whose energy is independently modulated by plasma generation parameters. The deposition step is carried out at a temperature lower than an alloy formation temperature between the metal and the substrate and at a temperature equal or close to the temperature used for a growth of film of graphene in order to avoid dewetting effects. DESCRIPTION OF DRAWING(S) - The diagram shows figure a schematic perspective view of a structure obtained by a method for manufacturing a film of graphene. Buried carbon rich area (CC) Film of graphene (CG) Metal layer (CM) Flow of carbon atom (Fc) Substrate. (S)