▎ 摘　　要

NOVELTY - Forming (M1) a thin film of transition metal dichalcogenide, comprises: (a) providing a substrate in a reaction chamber, where the substrate includes a sapphire substrate, a silicon oxide substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide substrate; (b) depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and (c) injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. USE - The method is useful for forming a thin film of transition metal dichalcogenide (claimed), which is used to manufacture two-dimensional material-containing devices including transistor, diode, optoelectronic device, tunneling device, logic device, and memory device. ADVANTAGE - The method provides the film easily with high throughput, while the device using the transition metal dichalcogenide thin film may be manufactured at high productivity and low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for forming (M2) a thin film of transition metal dichalcogenide, comprising step (a) as per se, (b1) depositing a transition metal dichalcogenide thin film on the substrate using a physical vapor deposition process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature, and step (c) as per se.