▎ 摘　　要

NOVELTY - The method involves setting diameter of silicon wafer silicon surface to predetermined range. The single crystal wafer is grown on the graphite crucible furnace carriage, so that gap is formed at the bottom of the wafer. The vacuum degree of single crystal growing furnace is set to predetermined range. The temperature of crystal growing furnace is increased. The cooling speed of furnace is set to predetermined range. The pneuma source is connected with a single crystal growing furnace. The heating temperature of furnace is reduced to room temperature. USE - Method for growing graphene in sides of silicon carbon surface used in nano-electronic device, sensor, electric power industry and electronic industry. ADVANTAGE - The thermal conductivity and stability of the silicon carbon surface are improved effectively.