• 专利标题:   TEM sample magnification correcting method, involves forming graphene layer in substrate, coating substrate with copper material, obtaining TEM sample, determining width measuring point of TEM sample, and obtaining boundary of TEM sample.
  • 专利号:   CN105445293-A, CN105445293-B
  • 发明人:   LIN Y, CAI B
  • 专利权人:   SEMICONDUCTOR MFG INT BEIJING CORP, SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT BEIJING CORP
  • 国际专利分类:   G01B015/00, G01N023/04
  • 专利详细信息:   CN105445293-A 30 Mar 2016 G01N-023/04 201628 Pages: 14 English
  • 申请详细信息:   CN105445293-A CN10425713 26 Aug 2014
  • 优先权号:   CN10425713

▎ 摘  要

NOVELTY - The method involves forming a graphene layer in a substrate. A lower layer of the graphene layer is provided with a bulge part. Width and thickness of the graphene layer are determined. The substrate is coated with copper material. TEM sample is obtained. Width measuring point of the TEM sample is determined. Boundary of the TEM sample is obtained. Magnification and amplification rates of the TEM sample are calculated by using the measuring point, where thickness of the graphene layer is about 20-100 nanometer. USE - TEM sample magnification correcting method. ADVANTAGE - The method enables prolonging service life of the TEM sample and reducing correcting cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a TEM magnification correcting sample forming method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a TEM sample magnification correcting method.