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  • 专利标题:   Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.
  • 专利号:   US2015249034-A1, JP2015160794-A, JP6241318-B2, US10079209-B2
  • 发明人:   KONDO D, NAKANO H, KONDO T, NAKANO M
  • 专利权人:   FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   H01L021/02, H01L021/04, H01L021/285, H01L021/762, H01L021/768, H01L023/532, H01L029/16, H01L029/66, C01B031/02, H01L021/28, H01L021/3205, H01L021/336, H01L021/8238, H01L027/08, H01L027/092, H01L029/786, H01L051/05, H01L051/30, H01L051/40, C01B032/184, H01L029/778, H01L029/45, H01L029/49, H01L029/51
  • 专利详细信息:   US2015249034-A1 03 Sep 2015 H01L-021/762 201561 Pages: 48 English
  • 申请详细信息:   US2015249034-A1 US631033 25 Feb 2015
  • 优先权号:   JP038895

▎ 摘　　要

NOVELTY - The manufacturing method involves forming a catalyst metal film on a substrate (10), and synthesizing a graphene film (12) on the catalyst metal film. The catalyst metal film is removed in an oxidation atmosphere of an oxidizer and the graphene film is transferred to the substrate. USE - Manufacturing method of graphene film. ADVANTAGE - Manufactures a graphene film in good state without generating wrinkles and stresses and leaving residues of the resin. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the semiconductor device. Substrate (10) Graphene film (12) Channel region (12c) Drain region (12d) Source region (12s) Gate insulation film (18)