▎ 摘　　要

NOVELTY - The preparation method of doped graphene involves providing substrate and then processing to obtain graphene layer, forming protective layer on graphene layer, completely covering protective layer using graphene layer, injecting doping element into graphene layer from upper surface of protective layer using ion implantation process, removing protective layer and then exposing graphene layer, performing graphene repair growth on exposed graphene layer by using chemical vapor deposition process to repair lattice damage caused by ion implantation in graphene layer and activating. USE - The method is useful for preparation of doped graphene. ADVANTAGE - The method enables preparation of doped graphene with high quality.