• 专利标题:   Meta-material structured graphene transistor for optical detector e.g. spectrum detection device, has micro-nano structure connected with gate electrode metal layer and grid electrode medium layer to form absorption property structures.
  • 专利号:   CN103117316-A, WO2014117314-A1, CN103117316-B, US2015357504-A1, US9444002-B2
  • 发明人:   CHEN Q, SONG S
  • 专利权人:   CHINESE ACAD SCI SUZHOU NANOTECH NANO, SUZHOU INST NANOTECH NANOBIONICS, CHEN Q, SONG S
  • 国际专利分类:   G01J003/02, G01J003/28, H01L031/0224, H01L031/028, H01L027/146, H01L029/08, H01L029/16, H01L029/423, H01L031/113, H01L029/06, H01L031/0216
  • 专利详细信息:   CN103117316-A 22 May 2013 H01L-031/028 201367 Pages: 10 Chinese
  • 申请详细信息:   CN103117316-A CN10036555 30 Jan 2013
  • 优先权号:   CN10036555

▎ 摘  要

NOVELTY - The transistor has a substrate formed with a gate electrode metal layer, a grid electrode medium layer, a graphene-containing layer and a source and drain electrode metal layer. The source and drain electrode metal layer is provided with a periodic micro-nano structure. The periodic micro-nano structure is linked to the gate electrode metal layer and the grid electrode medium layer to form complete absorption property structures. A gate dielectric layer is made of low optical absorption dielectric material that is selected from one of silicon oxide, silicon nitride or aluminum oxide material. USE - Meta-material structured graphene transistor for an optical detector e.g. spectrum detection device or image sensing apparatus (all claimed). ADVANTAGE - The transistor has high sensitivity and better narrow band response effect, and can work in visible light. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a meta-material structured graphene transistor.