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  • 专利标题:   Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.
  • 专利号:   KR2013020424-A, US2013065022-A1, US9184236-B2, KR1878737-B1
  • 发明人:   SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/02, H01L021/336, H01L021/786, H01L029/78, B32B003/30, B32B037/10, B32B037/14, B32B009/04, H01L021/20, H01L029/16
  • 专利详细信息:   KR2013020424-A 27 Feb 2013 H01L-021/02 201326 Pages: 10
  • 申请详细信息:   KR2013020424-A KR083054 19 Aug 2011
  • 优先权号:   KR083054

▎ 摘　　要

NOVELTY - Graphene transfer method involves forming trench on patterned substrate, arranging graphene layer using additive liquid on substrate, pressurizing the graphene layer on substrate, and removing additive liquid from the substrate by drying. USE - Method for transferring graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for substrate for transferring graphene.