1. 平台首页
  2. 国际专利信息
  • 专利标题:   Heterojunction vertical device based on graphene/tungsten disulfide/tantalum nickel selenium used in e.g. photodetection device, comprises silicon/silicon dioxide substrate, graphene film layer, and tungsten disulfide film layer.
  • 专利号:   CN115498060-A
  • 发明人:   ZHANG Q, ZHENG Z
  • 专利权人:   UNIV GUANGDONG TECHNOLOGY
  • 国际专利分类:   H01L031/0224, H01L031/109, H01L031/18
  • 专利详细信息:   CN115498060-A 20 Dec 2022 H01L-031/109 202311 Chinese
  • 申请详细信息:   CN115498060-A CN11064483 01 Sep 2022
  • 优先权号:   CN11064483

▎ 摘　　要

NOVELTY - A heterojunction vertical device based on graphene/tungsten disulfide/tantalum nickel selenium crystal comprises silicon/silicon dioxide substrate, graphene film layer, a tungsten disulfide film layer directly contact with the graphene film layer and a tantalum nickel selenium film layer directly contact with the tungsten disulfide film layer from bottom to top, and the two electrodes are respectively on the graphene film layer and tantalum nickel selenium film layer. The electrode on the graphene film layer is connected to source electrode. The electrode on the tantalum nickel selenium film layer is connected to the drain electrode. USE - Heterojunction vertical device based on graphene/tungsten disulfide/tantalum nickel selenium used in photodetection device (claimed) for optical communication, medical imaging, environment monitoring, analysis application, gas sensing and safety monitoring. ADVANTAGE - The heterojunction vertical device has highlight absorption rate, response degree and photoelectric conversion efficiency, high sensitivity, simple device structure and strong practicability, and exhibits good self-driving photodetection performance and stable performance. DETAILED DESCRIPTION - A heterojunction vertical device based on graphene/tungsten disulfide/tantalum nickel selenium (Ta2NiSe5) crystal comprises silicon/silicon dioxide substrate, graphene film layer, a tungsten disulfide film layer directly contact with the graphene film layer and a tantalum nickel selenium film (Ta2NiSe5) layer directly contact with the tungsten disulfide film layer from bottom to top, and the two electrodes are respectively on the graphene film layer and tantalum nickel selenium (Ta2NiSe5) film layer. The electrode on the graphene film layer is connected to source electrode. The electrode on the tantalum nickel selenium film layer is connected to the drain electrode. An INDEPENDENT CLAIM is included for preparation of heterojunction vertical device based on graphene/tungsten disulfide/tantalum nickel selenium crystal.