▎ 摘　　要

NOVELTY - The method involves sequentially forming a contact layer. A mesa structure is formed on a substrate. A lower electrode is formed on the contact layer without the mesa structure. An upper electrode is formed on the mesa structure to form a first sample. A first dielectric layer is grown on the first sample. The first dielectric layer is etched to form a graphene field plate dielectric layer on an upper surface of the mesa structure corresponding to the upper electrode. A manufactured multi-layered graphene film is transferred to a graphene field plate dielectric layer to form a graphene field plate and obtain a second sample. A second dielectric layer on the second sample is grown. The second dielectric layer is etched to remove a corresponding region of the lower electrode, a side wall of the mesa structure and a corresponding region of the upper electrode on the graphene field plate to form a graphene protective layer to obtain a photodiode. USE - Method for manufacturing a photodiode (claimed). ADVANTAGE - The method enables manufacturing the photodiode with the graphene field plate so as to ensure that vertical cells below a photon detection active area of the photodiode are uniformly distributed, so that photons incident from different positions can be sufficiently accelerated by an electric field and converted into photocurrent to-be-detected, thus improving detection efficiency of the photodiode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a photodiode. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a photodiode. (Drawing includes non-English language text).