▎ 摘　　要

NOVELTY - Preparing a graphene base (40), comprises: disposing a carbon-based material on at least one surface of a substrate (10) incapable of catalyzing graphitization; disposing a graphitization catalyst layer (20) on the carbon-based material; and forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere. USE - The process is useful to prepare a graphene base, which is useful in an electrical device (claimed), preferably field emission displays, liquid crystal display, organic light emitting device, super-capacitor, fuel cell, solar cell, field-effect transistors, memory device, transparent electrode, hydrogen storage device and optical fiber. ADVANTAGE - The process: directly forms the graphene base on surface of the substrate in a selected shape; provides at least 90% of the graphene area, which does not have a wrinkle; and grows graphene by in-situ on the substrate, hence results in a stronger bond between the substrate and the graphene than results from other methods of disposing graphene on a substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene base (40) obtained by the method, where the graphene is formed directly on at least one surface of the substrate (10), and at least 90% of the graphene area does not have a wrinkle. DESCRIPTION OF DRAWING(S) - The figure is a schematic diagram illustrating a graphene base. Substrate (10) Graphitization catalyst layer (20) Graphene (40)