▎ 摘　　要

NOVELTY - The transistor has an insulating material layer equipped in a lower part of a graphene. A thermal expansion material is equipped in the lower part of the graphene and arranged in an etched position of the insulating material layer. A crossed obstacle regulating circuit of the graphene is equipped in the lower part of the thermal expansion material. A drain electrode controls height of Fermi level of the graphene and On/Off electric power. The graphene is connected to a source electrode and a drain electrode and arranged in an unlike plane. USE - Graphene bending transistor for use in an electronic component (claimed) i.e. graphene bending circuit wafers. ADVANTAGE - The transistor performs manufacturing process of a monolayer or multi-layer graphene, a graphene forming process, wafer bonding process, manufacturing process of a low-temperature substrate growth graphene, so that middle and graphene atomic layer is etched during manufacturing process. The transistor passes electron through a tunnel equipped with an insulating layer between the graphene and the drain electrode so as to reach the drain electrode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a graphene single electron transistor (2) an electron tunneling graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a side perspective view of a graphene bending transistor.