▎ 摘　　要

NOVELTY - The device (20) has a graphene layer (24) arranged on an insulating layer (23) and comprising a nanopore (27) arranged at a center portion of the graphene layer. Electrode layers (25a, 25b) are arranged at respective opposite sides of the nanopore on a top surface of the graphene layer. A center region of the insulating layer is removed such that the center portion of the graphene layer is exposed. Another insulating layer (26) is arranged on the graphene layer, and covers the electrode layers. The graphene layer comprises a multilayer graphene structure with a stack of graphene layers. USE - Nanopore FET device. ADVANTAGE - The nanopore is provided with very small thickness, so that a base sequence of nucleic acid is analyzed at high resolution in an accurate manner. The insulating layer completely covers and seals the electrode layers to prevent a current leakage. DETAILED DESCRIPTION - The device includes passivation to combine element of fluorine, chlorine, bromine and oxygen. The graphene layer is formed by filling the removed region of the center portion of the insulating layer with a selective etch layer that is formed from amorphous silicon. The selective etch layer is removed using xenon difluoride gas. An INDEPENDENT CLAIM is also included for a method for manufacturing a nanopore device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross sectional view of a nanopore device. Nanopore FET device (20) Insulating layers (23, 26, 29) Graphene layer (24) Electrode layers (25a, 25b) Nanopore (27)