▎ 摘　　要

NOVELTY - The method involves forming a dielectric layer on a single crystal silicon substrate and forming a pressure sensitive film (S101). A metal catalyst layer is formed (S201) on a front surface of the pressure sensitive film. Ion-implanting carbon is filled in a resonator region for promoting graphene growth. An etched metal is deposited (S301) to establish an electrical interconnection. A dielectric layer is etched (S401) to release a graphene resonator. A glass packaging cover plate is manufactured. The glass packaging cover plate is aligned on a surface of the graphene resonator. A glass protection plate is manufactured (S501). The glass protection plate is aligned with a rear surface of the pressure sensitive film. The glass protection plate is cut into a separate pressure sensor chip. USE - Ion injection based graphene resonance-type micro-electro mechanical systems (MEMS) pressure sensor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene resonance-type micro-electro mechanical systems pressure sensor manufacturing method. '(Drawing includes non-English language text)' Step for forming dielectric layer on single crystal silicon substrate and forming pressure sensitive film (S101) Step for forming metal catalyst layer on front surface of pressure sensitive film (S201) Step for depositing etched metal to establish electrical interconnection (S301) Step for etching dielectric layer to release graphene resonator (S401) Step for manufacturing glass protection plate (S501)