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  • 专利标题:   Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.
  • 专利号:   CN105624778-A, CN105624778-B
  • 发明人:   LIU K, YU D, WANG E, ZHANG Z, XU X
  • 专利权人:   UNIV PEKING, UNIV PEKING
  • 国际专利分类:   C30B025/18, C30B029/02
  • 专利详细信息:   CN105624778-A 01 Jun 2016 C30B-025/18 201648 Pages: 11 Chinese
  • 申请详细信息:   CN105624778-A CN10191702 30 Mar 2016
  • 优先权号:   CN10191702

▎ 摘　　要

NOVELTY - Rapid continuous preparation of large crystal domain graphene thin film comprises setting metal foil into oxide substrate, and growing on surface. USE - Method for rapid continuous preparation of large crystal domain graphene thin film (claimed). ADVANTAGE - The method is simple, and solves small chemical vapor deposition method of graphene thin film crystal domain size, low electrical property, complicated substrate surface treatment and long growing period problems.