▎ 摘　　要

NOVELTY - The detector has a complementary metaloxidesemiconductor CMOS process for preparing a CMOS measuring circuit system and a CMOS infrared sensing structure. An upper end of the CMOS measuring circuit system comprises a single layer of a sealed releasing insulating layer. The sealed releasing insulating layer manufactures the CMOS infrared sensing structure to release an etching process. A CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process, an IMD process and a RDL process. A column-level analogue front end circuit performs a trans impedance amplification to two paths of current and outputs as an output voltage. USE - Thermal symmetry type infrared detector for use in mobile phone application field. Uses include but are not limited to background monitoring market, vehicle auxiliary market, household market and intelligent manufacturing market. ADVANTAGE - The detector reduces problem of low performance, low pixel scale, low yield and bad consistency and the total thermal conductivity of the infrared detector, and improves the structure stability of the detector, and realizes better product of chip, low cost, high yield and large scale integrated production of target, thus provides wider application market for infrared detector.