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  • 专利标题:   Inducing the growth of the rubrene film by chemically active graphene quantum dots comprises inducing laterally induced graphene quantum dots layers and red fluorescent molecules on silica substrate along graphene quantum dot edges.
  • 专利号:   CN107083530-A, CN107083530-B
  • 发明人:   WANG L, FAN S, ZHANG L, ZHANG P, ZHU Y, YIN L, SUN L, LI Z
  • 专利权人:   UNIV CHANGCHUN TECHNOLOGY, UNIV CHANGCHUN TECHNOLOGY
  • 国际专利分类:   B82Y040/00, C23C014/02, C23C014/12, C23C014/24
  • 专利详细信息:   CN107083530-A 22 Aug 2017 C23C-014/12 201760 Pages: 5 Chinese
  • 申请详细信息:   CN107083530-A CN10231843 11 Apr 2017
  • 优先权号:   CN10231843

▎ 摘　　要

NOVELTY - Inducing the growth of the rubrene film by the graphene quantum dots chemical activity comprises inducing laterally induced graphene quantum dots layers and red fluorescent molecules on the silica substrate along the edges of the graphene quantum dot. USE - The method is useful for inducing the growth of the rubrene film by the chemically active graphene quantum dots (claimed). ADVANTAGE - The method: meets the crystalline growth of rubrene to form a highly ordered film.