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  • 专利标题:   Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.
  • 专利号:   CN105019030-A, CN105019030-B
  • 发明人:   SHI D, WANG D, ZHANG G
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST, CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C30B029/02, C30B029/38, C30B033/02
  • 专利详细信息:   CN105019030-A 04 Nov 2015 C30B-033/02 201619 Pages: 13 Chinese
  • 申请详细信息:   CN105019030-A CN10174485 28 Apr 2014
  • 优先权号:   CN10174485

▎ 摘　　要

NOVELTY - Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment. USE - Method for preparing highly crystalline graphene/hexagonal boron nitride with stacked structure (claimed). ADVANTAGE - The method ensure good orientation matching.