▎ 摘　　要

NOVELTY - A Schottky diode comprises 1st electrode (2) formed directly or indirectly on a 1st region of surface of substrate or other supporting body or structure (1); 2nd electrode (5); and body of semiconductive material (4) connected to 1st electrode at a 1st interface (42,421) and connected to 2nd electrode at a 2nd interface (452). The 1st interface has 1st planar region lying in 1st plane, and the 1st electrode has 1st projection onto the 1st plane in a 1st direction normal to the 1st plane. The 2nd interface has 2nd planar region, and the 2nd electrode has 2nd projection onto the 1st plane in the 1st direction, at least a portion of the 2nd projection lies outside the 1st projection, and one of 1st and 2nd interface provides a Schottky contact. Schottky diode further has dielectric body (3) arranged to cover at least a 2nd region of surface of substrate or other supporting body or structure adjacent the 1st region. USE - A Schottky diode for incorporation in thin and/or flexible electronic circuits (claimed). ADVANTAGE - The trade-off between the series resistance of the diode and the Schottky Ohmic contact separation (series resistance increases with increased separation) can be overcome by increasing the diode W/L ratio while still maintaining low parasitic capacitance and precise control over the channel length. DETAILED DESCRIPTION - A Schottky diode comprises 1st electrode (2) formed directly or indirectly on a 1st region of surface of substrate or other supporting body or structure (1); 2nd electrode (5); and body of semiconductive material (4) connected to 1st electrode at a 1st interface (42,421) and connected to 2nd electrode at a 2nd interface (452). The 1st interface has 1st planar region lying in 1st plane, and the 1st electrode has 1st projection onto the 1st plane in a 1st direction normal to the 1st plane. The 2nd interface has 2nd planar region, and the 2nd electrode has 2nd projection onto the 1st plane in the 1st direction, at least a portion of the 2nd projection lies outside the 1st projection, and one of 1st and 2nd interface provides a Schottky contact. The body has two sides in which 2nd side is spaced from 1st side by a thickness of body in 1st direction; 1st planar region is on 1st side of the body; and 2nd planar region is on 2nd side of the body. Schottky diode further has dielectric body (3) arranged to cover at least a 2nd region of surface of substrate or other supporting body or structure adjacent the 1st region. The body of semiconductive material has a 1st portion, arranged over the 1st electrode and connected to the 1st electrode at the 1st interface, and a 2nd portion arranged over a portion of the body of dielectric material covering the 2nd region. The 2nd electrode is formed at least partly on the 2nd portion of the body of semiconductive material. A portion of 1st projection lies inside the 2nd projection, and where a projection, in the 1st direction, of the 2nd planar region onto the 1st plane lies completely outside a projection, in the 1st direction, of the 1st planar region onto the 1st plane. An INDEPENDENT CLAIM is included for circuit comprising at least a 1st diode and a 2nd diode, where 1st and 2nd planar regions of the 1st diode are offset (i.e. from each other) by a 1st distance, and the 1st and 2nd planar regions of the 2nd diode are offset by a 2nd distance, where the 2nd distance is different from the 1st distance, and/or where the circuit is an integrated circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of an electronic device. Substrate or other supporting body or structure (1) First electrode (2) Dielectric body (3) Body of semiconductive material (4) Second electrode (5) First interface (42,421) Second interface (452)