▎ 摘　　要

NOVELTY - Manufacturing (m1) a graphene nano-ribbon involves: forming a stack of a seed layer (102-1, 102-2) and a growth blocking layer (103-1, 103-2) on an insulating substrate (100); patterning the stack of the seed layer and the growth blocking layer to form at least one stack stripe which exposes a side surface of the seed layer; and growing a graphene nano-ribbon at the side surface of the seed layer. USE - For manufacturing a graphene nano-ribbon which is useful in the preparation of a metal-oxide-semiconductor field effect transistor (MOSFET). ADVANTAGE - The graphene nano-ribbons have a thickness substantially equal to at least one (preferably at least two) layer of carbon atoms of graphite by controlling a growth condition, and have a width dependent on a thickness of the seed layer. The present method reduces manufacture cost because the graphene nano-ribbon can have the desired width by controlling the thickness of the seed layer, without the need for additional patterning processes or layer transfer processes. The present MOSFET has improved properties and reduced manufacture cost, as graphene nano-ribbons can be used in the channel region to increase on-state current. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacturing metal-oxide-semiconductor field effect transistor (MOSFET), involving: manufacturing at least one graphene nano-ribbon with the method (m1); forming a protection layer (101) between the stack stripe so that the graphene nano-ribbon is embedded in the protection layer; removing the stack stripe to form at least one trench which exposes a surface of the graphene nano-ribbon at a side surface of the protection layer; forming a stack of a gate dielectric and a gate conductor on the graphene nano-ribbon; forming sidewall spacers at both sides of the gate conductor; forming a source region and a drain region at portions of the graphene nano-ribbon; and filling the trench in the protection layer with a metal so as to form a source contact for the source region and a drain contact for the drain region; and (2) a MOSFET, comprising an insulating substrate; a protection layer on the insulating substrate; at least one graphene nano-ribbon embedded in the protection layer and having a surface which is exposed at a side surface of the protection layer; a channel region in each of the graphene nano-ribbon; a source region and a drain region in each of the graphene nano-ribbon, the channel region being located between the source region and the drain region; a gate dielectric on the at least one graphene nano-ribbon; a gate conductor on the gate dielectric; and a source contact and a drain contact which contact the source region and the drain region respectively on the side surface of the protection layer. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a method for manufacturing a graphene nano-ribbon. Semiconductor substrate (100) Oxide base layers (101) Seed layers (102-1, 102-2) growth blocking layers (103-1, 103-2)