▎ 摘　　要

NOVELTY - The semiconductor structure has silicon carbide fin which is located on a surface of substrate (12), and a graphene nanoribbon which is located on each bare sidewall of silicon carbide fin. A gate structure is oriented perpendicular to silicon carbide fin, and overlaps a portion of each graphene nanoribbon and located atop a portion of silicon carbide fin. The portion of each graphene nanoribbon overlapped by gate structure defines a channel region of the semiconductor structure. USE - Semiconductor structure. ADVANTAGE - Maintains good short channel characteristics by reducing the length of the MOSFET gate. Ensures that location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided can be determined by corresponding silicon carbide fins and nanowires from which they are formed. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the structure after forming a hard mask on an upper surface of the silicon carbide layer of the silicon carbide-on-insulator substrate. Substrate (12) Insulating layer (14) Silicon carbide layer (16) Hard mask (30)