▎ 摘　　要

NOVELTY - The device (112) has memory cells comprising graphene channels (132,142,152), graphene storage layers (180-1-180-8), and graphene electrodes (184-1-184-8). A graphene channel layer (176) is formed on the surface of substrate, and memory cells are formed on the channel layer. Memory cells are comprised of tunnel oxide on surface of graphene channel layer opposite substrate. Graphene storage layer is on tunnel oxide surface opposite channel layer. Graphene electrode is on surface of control oxide layer (182-1-182-8) opposite to the storage layer. USE - Graphene Flash Memory (GFM) device used in mobile smart phone, portable media player, video camera, memory card, USB flash drive and gaming console. ADVANTAGE - The flash memory device with strong immunity to short channel effect (SCE) and cell-to-cell interference is provided, thus memory device can be scaled down the size of the memory cells to increase the density of memory cells. The channel mobility of the graphene channel layers is improved. The scalability of the GFM device is increased, thus the storage capacity for die area for memory cells is increased. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the GFM device with multiple memory cell layers. GFM device (112) Graphene channels (132,142,152) Graphene channel layer (176) Graphene storage layers (180-1-180-8) Control oxide layer (182-1-182-8) Graphene electrodes (184-1-184-8)