▎ 摘　　要

NOVELTY - The transistor has an organic semiconductor layer (154) that is overlapped with a gate electrode (124). The source electrode (173) and drain electrode (175) are electrically connected with the organic semiconductor layer. The graphene layers (163,165) are respectively positioned between the source electrode and organic semiconductor layer, and between the drain electrode and the organic semiconductor. The source electrode and drain electrode are made of gold, copper, nickel, aluminum, molybdenum, chrome, tantalum, and titanium or titanium alloy. USE - Organic thin film transistor (TFT) of electric device such as LCD, organic light-emitting device, solar cell, and organic sensor (all claimed). ADVANTAGE - The lowering of constant resistance between electrode and organic semiconductor layer can be prevented and electric charge mobility can be enhanced. The electrode surface can be prevented from being oxidized and the degradation of the electrical characteristic of the thin film transistor can be prevented. The manufacturing cost of the organic thin film transistor can be reduced by using cheap metal. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing organic thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the organic thin film transistor. Gate electrode (124) Organic semiconductor layer (154) Graphene layers (163,165) Source electrode (173) Drain electrode (175)