• 专利标题:   Making graphene layer used as transparent electrode layer in optoelectronic devices, comprises e.g. forming metal layer on first side of substrate, forming carbon source layer on metal layer and irradiating second side of substrate by laser.
  • 专利号:   US2013273260-A1, CN103378222-A, TW201341310-A
  • 发明人:   CHUEH Y, DING J, LIN H, HUANG Y, QUE Y
  • 专利权人:   CHUEH Y, DING J, LIN H, HUANG Y, QUE Y, UNIV NAT TSINGHUA
  • 国际专利分类:   C01B031/04, H01L021/02, H01L033/00, H01B001/04
  • 专利详细信息:   US2013273260-A1 17 Oct 2013 C01B-031/04 201370 Pages: 10 English
  • 申请详细信息:   US2013273260-A1 US861148 11 Apr 2013
  • 优先权号:   TW112990

▎ 摘  要

NOVELTY - Manufacturing a graphene layer (50), comprises: providing a substrate (10); forming a metal layer on a first side of the substrate; forming a carbon source layer on the metal layer; providing a laser, which irradiates a second side of the substrate and passes through the substrate to form a graphene layer on an interface between the substrate and the metal layer; and providing an organic solvent and an acid solution to remove the carbon source layer and the metal layer respectively. USE - The method is useful for manufacturing a graphene layer (claimed), which is useful as a transparent electrode layer in optoelectronic devices. ADVANTAGE - The method: provides a high-density transparent graphene layer without performing transferring process, hence it is simple and cost effective, and reduces production time; and avoids cracking of the graphene, as compared to conventional methods. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the method of manufacturing the graphene layer. Substrate (10) Graphene layer (50)