• 专利标题:   Preparing graphene doped with nitrogen and sulfur, comprises e.g. mixing graphene, nitrogen-sulfur doping source and agate ball, ball milling, washing, filtering, and freeze-drying to obtain nitrogen and sulfur double-doped graphene.
  • 专利号:   CN112758919-A
  • 发明人:   DUAN P, SHAN Y, YIN L, ZHANG X
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   C01B032/194, H01G011/24, H01G011/26, H01G011/30, H01G011/32, H01G011/86
  • 专利详细信息:   CN112758919-A 07 May 2021 C01B-032/194 202146 Pages: 10 Chinese
  • 申请详细信息:   CN112758919-A CN11585097 28 Dec 2020
  • 优先权号:   CN11585097

▎ 摘  要

NOVELTY - Preparing graphene doped with nitrogen and sulfur, comprises mixing graphene, nitrogen-sulfur doping source and agate ball uniformly, carrying out ball milling reaction, washing, filtering, and freeze-drying after the ball milling reaction to obtain nitrogen and sulfur double-doped graphene. USE - The method is useful for preparing graphene doped with nitrogen and sulfur. ADVANTAGE - The method has the characteristics of large specific surface area and high specific capacitance, and exhibits excellent rate performance and stability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) graphene doped with nitrogen and sulfur obtained by the method as mentioned above; and (2) preparing supercapacitor material, comprising mixing 80-90 pts. wt. nitrogen, sulfur double-doped graphene, 5-10 pts. wt. conductive acetylene black and 5-10 pts. wt. Polyvinylidene fluoride binder in the solvent, preparing the slurry, coating the slurry evenly on the substrate, and extruding the super capacitor electrode material.