▎ 摘　　要

NOVELTY - An electronic device (100) comprises: 1) a substrate (110) comprising a channel between a source and a drain; 2) a gate electrode above the substrate and facing the channel, spaced apart from the channel in a first direction; and 3) a ferroelectric thin film structure between the channel and the gate electrode, containing a first ferroelectric layer, a crystallization barrier layer which has a dielectric material, and a second ferroelectric layer, where the first ferroelectric layer, the crystallization barrier layer, and the second ferroelectric layer are sequentially provided on the channel, in the first direction. The average sizes of crystal grains of the first ferroelectric layer, is less than or equal to the average of sizes of crystal grains of the second ferroelectric layer. A size of each crystal grain refers to a maximum width of the crystal grain, in a cross-section perpendicular to the first direction. USE - Electronic device is used in electronic apparatus. ADVANTAGE - The electronic devices have a small size and/or high performance. The average sizes of crystal grains of the first ferroelectric layer being less than or equal to the average sizes of crystal grains of the second ferroelectric layer, enables improving the dispersion of performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic apparatus which comprises a memory device and a controller electrically connected to the memory device and configured to control the memory device, where the memory device and/or the controller comprises the electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows cross-sectional schematic structure of electronic device. 100Electronic device 110Substrate 150Ferroelectric thin film structure 190Gate electrode