▎ 摘　　要

NOVELTY - The device has a rear gate electrode formed on a flexible substrate. A tunneling layer is formed on the rear gate electrode. A charge trapping layer i.e. zero-dimensional quantum dot, with charge trapping function is formed on the tunneling layer, where the quantum dot is black phosphorus quantum dot, graphene quantum dot or cadmium selenide quantum dot. A barrier layer is formed on the charge trapping layer. A channel i.e. two-dimensional material, with dual-sided functional asymmetric feature is formed on the barrier layer, where the two-dimensional material is Molybdenum sulfide selenide, Chromium Selenyl sulfid or Zirconium sulfide selenide. Source and drain electrodes are respectively formed on two sides of the channel to realize simulation of a first nerve synaptic front end through a virtual optical grid by using two-dimensional material efficient light absorption efficiency for realizing simulation of a second nerve synapse front end by using electrical modulation. USE - Two-dimensional/zero-dimensional mixed structure artificial heterogeneous synaptic device. ADVANTAGE - The device realizes photoelectric dual modulation and effectively reduces problem of information acquisition and data processing separation in pure electric modulation, and can reduce power consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a two-dimensional/zero-dimensional mixed structure artificial heterogeneous synaptic device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a two-dimensional/zero-dimensional mixed structure artificial heterogeneous synaptic device manufacturing method. (Drawing includes non-English language text).