▎ 摘　　要

NOVELTY - Formation of a metal-graphene hetero-junction metal interconnect involves forming a carbon source (20) layer by depositing a carbon source on a top surface of a substrate (10), forming a metal catalyst layer (30) by depositing a metal catalyst on the carbon source layer, and synthesizing a graphene (40) with a portion of the carbon source layer in contact with the metal catalyst layer by carrying out heat treatment (S106) on the substrate. USE - Formation of metal-graphene hetero-junction metal interconnect used in semiconductor device (claimed). ADVANTAGE - The method is economical, requires less time, effectively forms metal-graphene hetero-junction metal interconnect having excellent electrical properties, stability. The interconnect enhances quality of semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the formation of metal-graphene hetero-junction metal interconnect. Substrate (10) Carbon source (20) Metal catalyst layer (30) Graphene (40) Heat treating of substrate (S106)