• 专利标题:   Non-symmetrical electrode two-dimensional material heterojunction cascade photoelectric detector, comprises two-dimensional material heterojunction formed by alternately laminating two-dimensional material and n-layer heterojunction.
  • 专利号:   CN112531069-A
  • 发明人:   CHEN H, XU C, FU Y
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0336, H01L031/109, H01L031/18
  • 专利详细信息:   CN112531069-A 19 Mar 2021 H01L-031/109 202133 Pages: 7 Chinese
  • 申请详细信息:   CN112531069-A CN11303908 19 Nov 2020
  • 优先权号:   CN11303908

▎ 摘  要

NOVELTY - The detector comprises a detector main body provided with a substrate, a first electrode, a two-dimensional material heterojunction, and a second electrode. The two-dimensional material heterojunction is formed with an n-layer heterojunction by alternately laminating graphene and two-dimensional material. The two-dimensional material/graphene heterojunction is provided with a first electrode and a second electrode. The first electrode is connected with the second electrode. The value of n is 3 to 5 and the Fermi level from the bottom layer to the top layer is gradually reduced. USE - Non-symmetrical electrode two-dimensional material heterojunction cascade photoelectric detector. ADVANTAGE - The detector improves light response degree of the detector, and increases moving rate of the carrier due to potential gradient difference so as to improve response speed. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a non-symmetrical electrode two-dimensional material heterojunction cascade photoelectric detector.