▎ 摘　　要

NOVELTY - Formation of metal oxide layer involves surface-modifying graphene, and forming metal oxide layer surface-modified graphene by atomic layer deposition. USE - Formation of metal oxide layer for electronic device e.g. light-emitting device, diode, transistor, tunneling device, binary junction transistor, varistor, field-effect transistor, memory device, solar cell, photo detector, logic device, energy storage device, display device and sensor (all claimed) e.g. optical sensor and gas sensor. ADVANTAGE - The method enables formation of metal oxide layer having excellent light transmittance, band gap energy, optical clarity and quantum confinement effect.