• 专利标题:   Graphene FET sensor device for measuring external environment, has source electrode and drain electrode that are mutually opposed to one another, and graphene film that is laminated on surface of electrode substrate.
  • 专利号:   JP2015031666-A
  • 发明人:   KOSHOBU N, DOI Y, YAMADA T, TOKO H
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP
  • 国际专利分类:   B82Y015/00, C01B031/02, G01J001/02, G01J005/02, H01L029/06, H01L029/786, H01L031/10
  • 专利详细信息:   JP2015031666-A 16 Feb 2015 G01J-001/02 201519 Pages: 15 Japanese
  • 申请详细信息:   JP2015031666-A JP163637 06 Aug 2013
  • 优先权号:   JP163637

▎ 摘  要

NOVELTY - The sensor device (10) has a gate electrode (3) that is covered by the insulating film (2) and is formed on the electrode substrate (1). The source electrode (4) and drain electrode (5) are mutually opposed to one another. A graphene film (6) is laminated on the surface of the electrode substrate. An optical sensor element is provided within the transparent airtight container in the inert gas environment with respect to to-be-measured optical wavelength. A shutter mechanism is provided for opening and closing the mechanical door. USE - Graphene FET sensor device for measuring external environment. ADVANTAGE - Various physical quantities are measured by producing FET element by graphene, so that the sensor environment is controlled. Various sensor device used in the field of environmental measurement is introduced, so that the industrial utility value can be increased. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene FET sensor device. Electrode substrate (1) Insulating film (2) Gate electrode (3) Source electrode (4) Drain electrode (5) Graphene film (6) Graphene FET sensor device (10)