• 专利标题:   Manufacture of graphene quantum dots for next-generation displays, involves coating block copolymer on material layer with graphene layer, forming self-assembled structure by heating, and etching material layer using structure as mask.
  • 专利号:   KR2012112924-A, KR1333057-B1
  • 发明人:   HO K G, IK P U, SEOP L J, SIK J Y, U JEON S, JEON S W, JUNG Y S, KIM K H, LEE J S, PARK W I
  • 专利权人:   KOREA ADV INST SCI TECHNOLOGY, KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   C09K011/00, C09K011/06
  • 专利详细信息:   KR2012112924-A 12 Oct 2012 C09K-011/00 201408 Pages: 11
  • 申请详细信息:   KR2012112924-A KR030521 04 Apr 2011
  • 优先权号:   KR030521

▎ 摘  要

NOVELTY - A block copolymer is coated on a material layer consisting of a single layer graphene. A self-assembled structure of several tens of nm size is formed on the material layer by heat-treatment and phase-separation. The material layer is then etched by using the self-assembled structure as a mask, to obtain graphene quantum dots. USE - Manufacture of graphene quantum dots for next-generation displays. ADVANTAGE - The method enables manufacture of graphene quantum dots of desired size with broad photoluminescence spectral characteristics. Since the size of quantum dots can be controlled, control of wavelength of light and implementation of red-green-blue color are eased. The obtained quantum dots have excellent brightness and color gamut, and provide highly efficient next-generation displays.